Parker, Evan H. C. ; Whall, Terence E. ; König, Ulf ; Känel, von Hans ; Hoeck, Georg ; Herzog, Hans-Joest ; Myronov, Maksym ; Durov, Sergiy ; Hackbarth, Thomas ; Mironov, Oleg A.
Subject and Keywords:SiGe ; effective hole mobility ; C-V ; metamorphic MOSFET ; LF-noise ; I-V
Description: Publisher:Instytut Łączności - Państwowy Instytut Badawczy, Warszawa
Date: Resource Type: Format: DOI: ISSN: eISSN: Source:Journal of Telecommunications and Information Technology
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