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Title: New approach to power semiconductor devices modeling, Journal of Telecommunications and Information Technology, 2004, nr 1

Creator:

Napieralska, Małgorzata ; Napieralski, Andrzej

Date:

2004, nr 1

Resource Type:

artykuł

Description:

The main problems occurring during high power device modeling are discussed in this paper. Unipolar and bipolar device properties are compared and the problems concerning high time-constant values related to the diffusion phenomena in the large base are explained. Traditional and novel concepts of power device simulation are presented. In order to make accurate and modern semiconductor device models widely accessible, a website has been designed and made available to Internet users, allowing them to perform simulations of electronic circuits containing high power semiconductor devices. In this software, a new distributed model of power diode has been included. Together with the existing VDMOS macromodel library, the presented approach can facilitate the design process of power circuits. In the future, distributed models of IGBT, BJT and thyristor will be added.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:515

DOI:

10.26636/jtit.2004.1.226

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

SPICE power device modeling VDMOS web-based simulation IGBT circuit simulation PIN diode

Object collections:

Last modified:

Jun 4, 2024

In our library since:

Mar 10, 2010

Number of object content hits:

595

All available object's versions:

https://bc.itl.waw.pl/publication/575

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Edition name Date
Napieralski, Andrzej; Napieralska, Małgorzata, New approach to power semiconductor devices modeling, Journal of Telecommunications and Information Technology, 2004, nr 1 Jun 4, 2024

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(+48) 5128 696

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biblioteka@il-pib.pl

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