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Search for: [Creator = "Ćwil, Michał"]

Number of results: 5

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The role of fluorine-containing ultra-thin layer in controlling boron thermal diffusion into silicon, Journal of Telecommunications and Information Technology, 2007, nr 3

Beck, Romuald B. Ćwil, Michał Kalisz, Małgorzata Barcz, Adam

2007, nr 3
artykuł
Comparison of composition of ultra-thin silicon oxynitride layers’ fabricated by PECVD and ultrashallow rf plasma ion implantation, Journal of Telecommunications and Information Technology, 2007, nr 3

Beck, Romuald B. Ćwil, Michał Konarski, Piotr Bieniek, Tomasz Schmeißer, Dieter Hoffmann, Patrick Mroczyński, Robert

2007, nr 3
artykuł
Composition and electrical properties of ultra-thin SiOxNy layers formed by rf plasma nitrogen implantation/plasma oxidation processes, Journal of Telecommunications and Information Technology, 2007, nr 3

Jakubowski, Andrzej Beck, Romuald B. Ćwil, Michał Konarski, Piotr Bieniek, Tomasz Schmeißer, Dieter Hoffmann, Patrick

2007, nr 3
artykuł
Applying shallow nitrogen implantation from rf plasma for dual gate oxide technology, Journal of Telecommunications and Information Technology, 2007, nr 3

Jakubowski, Andrzej Beck, Romuald B. Ćwil, Michał Głuszko, Grzegorz Konarski, Piotr Bieniek, Tomasz

2007, nr 3
artykuł
The influence of annealing (900◦C) of ultra-thin PECVD silicon oxynitride layers, Journal of Telecommunications and Information Technology, 2007, nr 3

Jakubowski, Andrzej Beck, Romuald B. Ćwil, Michał Głuszko, Grzegorz Konarski, Piotr Schmeißer, Dieter Hoffmann, Patrick Mroczyński, Robert

2007, nr 3
artykuł

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