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Title: Comparison of composition of ultra-thin silicon oxynitride layers’ fabricated by PECVD and ultrashallow rf plasma ion implantation, Journal of Telecommunications and Information Technology, 2007, nr 3

Creator:

Beck, Romuald B. ; Ćwil, Michał ; Konarski, Piotr ; Bieniek, Tomasz ; Schmeißer, Dieter ; Hoffmann, Patrick ; Mroczyński, Robert

Date:

2007, nr 3

Resource Type:

artykuł

Description:

In this paper differences in chemical composition of ultra-thin silicon oxynitride layers fabricated in planar rf plasma reactor are studied. The ultra-thin dielectric layers were obtained in the same reactor by two different methods: ultrashallow nitrogen implantation followed by plasma oxidation and plasma enhanced chemical vapour deposition (PECVD). Chemical composition of silicon oxynitride layers was investigated by means of X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). The spectroscopic ellipsometry was used to determine both the thickness and refractive index of the obtained layers. The XPS measurements show considerable differences between the composition of the fabricated layers using each of the above mentioned methods. The SIMS analysis confirms XPS results and indicates differences in nitrogen distribution.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:279

DOI:

10.26636/jtit.2007.3.822

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

oxynitride PECVD ultra-thin dielectrics SIMS XPS

Object collections:

Last modified:

Jul 24, 2024

In our library since:

Jan 25, 2010

Number of object content hits:

483

All available object's versions:

https://bc.itl.waw.pl/publication/322

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Edition name Date
Mroczyński, Robert; Bieniek, Tomasz; Beck, Romuald B.; Ćwil, Michał; Konarski, Piotr; Hoffmann, Patrick; Schmeißer, Dieter , Comparison of composition of ultra-thin silicon oxynitride layers’ fabricated by PECVD and ultrashallow rf plasma ion implantation, Journal of Telecommunications and Infor... Jul 24, 2024

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

Phone

(+48) 5128 696

E-Mail

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