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Title: Composition and electrical properties of ultra-thin SiOxNy layers formed by rf plasma nitrogen implantation/plasma oxidation processes, Journal of Telecommunications and Information Technology, 2007, nr 3

Autor:

Jakubowski, Andrzej ; Beck, Romuald B. ; Ćwil, Michał ; Konarski, Piotr ; Bieniek, Tomasz ; Schmeißer, Dieter ; Hoffmann, Patrick

Data wydania:

2007, nr 3

Typ zasobu:

artykuł

Opis:

Experiments presented in this work are a summary of the study that examines the possibility of fabrication of oxynitride layers for Si structures by nitrogen implantation from rf plasma only or nitrogen implantation from rf plasma followed immediately by plasma oxidation process. The obtained layers were characterized by means of: ellipsometry, XPS and ULE-SIMS. The results of electrical characterization of NMOS Al-gate test structures fabricated with the investigated layers used as gate dielectric, are also discussed.

Wydawca:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Identyfikator zasobu:

oai:bc.itl.waw.pl:277

DOI:

10.26636/jtit.2007.3.820

ISSN:

1509-4553

eISSN:

1899-8852

Źródło:

Journal of Telecommunications and Information Technology

Język:

ang

Prawa:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

oxynitride CMOS gate stack plasma implantation

Object collections:

Last modified:

Jul 24, 2024

In our library since:

Jan 25, 2010

Number of object content hits:

268

All available object's versions:

https://bc.itl.waw.pl/publication/320

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Edition name Date
Bieniek, Tomasz; Beck, Romuald B.; Jakubowski, Andrzej; Konarski, Piotr; Ćwil, Michał; Hoffmann, Patrick; Schmeißer, Dieter, Composition and electrical properties of ultra-thin SiOxNy layers formed by rf plasma nitrogen implantation/plasma oxidation processes, Journal of Telecommunications and ... Jul 24, 2024

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

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(+48) 5128 696

E-Mail

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