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Title: SiGe HBT wideband amplifier for millimeter wave applications, Journal of Telecommunications and Information Technology, 2007, nr 1

Creator:

Boeck, Georg ; Noether, Nils ; Krcmar, Marko

Date:

2007, nr 1

Resource Type:

artykuł

Description:

A wideband amplifier up to 50 GHz has been implemented in a 0.25 μm, 200 GHz ft SiGe BiCMOS technology. Die size was 0.7×0.73 mm2. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz. Noise figure was lower than 9 dB up to 34 GHz and a current of 30 mA was drawn from a 4 V supply. To the author’s best knowledge this is the highest gain bandwidth product of a monolithic SiGe HBT amplifier ever reported.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:230

DOI:

10.26636/jtit.2007.1.742

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

HBT wideband amplifier millimeter wave bipolar integrated circuits SiGe

Object collections:

Last modified:

Jun 25, 2024

In our library since:

Jan 7, 2010

Number of object content hits:

1 304

All available object's versions:

https://bc.itl.waw.pl/publication/264

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Edition name Date
Krcmar, Marko; Noether, Nils; Boeck, Georg, SiGe HBT wideband amplifier for millimeter wave applications, Journal of Telecommunications and Information Technology, 2007, nr 1 Jun 25, 2024

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

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(+48) 5128 696

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