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Title: Silicon-germanium for ULSI, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Autor:

Halll, Steve ; Eccleston, Bill

Data wydania:

2000, nr 3,4

Typ zasobu:

artykuł

Opis:

The paper describes recent progress for the introduction of silicon-germanium, bipolar and field effect heterostructure transistors into mainstream integrated circuit application. Basic underlying concepts and device architectures which give rise to the desired performance advantages are described together with the latest state-of the-art results for HBT and MOSFET devices. The integration of such devices into viable HBT, BiCMOS and CMOS is reviewed. Other contributions that SiGe can make to enhance the performance of ULSI circuits are mentioned also.

Wydawca:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Identyfikator zasobu:

oai:bc.itl.waw.pl:1637 ; ISSN 1509-4553, on-line: ISSN 1899-8852

DOI:

10.26636/jtit.2000.3-4.33

ISSN:

1509-4553

eISSN:

1899-8852

Źródło:

Journal of Telecommunications and Information Technology

Język:

ang

Prawa:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

HBT SiGe-CMOS silicon-germanium

Object collections:

Last modified:

25 lut 2026

In our library since:

16 maj 2014

Number of object content hits:

248

All available object's versions:

https://bc.itl.waw.pl/publication/1837

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Edition name Date
Halll, Steve; Eccleston, Bill, Silicon-germanium for ULSI, Journal of Telecommunications and Information Technology, 2000, nr 3,4 25 lut 2026

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

Phone

(+48) 5128 696

E-Mail

biblioteka@il-pib.pl

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