Advanced search ?

Object

Download

Title: Advanced compact modeling of the deep submicron technologies, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Creator:

Grabiński, Władysław ; Bucher, Matthias ; Sallese, Jean-Michel ; Krummenacher, Francçis

Date:

2000, nr 3,4

Resource Type:

artykuł

Description:

The technology of CMOS large-scale integrated circuits (LSI’s) achieved remarkable advances over last 25 year and the progress is expected to continue well into the next century. The progress has been driven by the downsizing of the active devices such as MOSFETs. Approaching these dimensions, MOSFET characteristics cannot be accurately predicted using classical modeling methods currently used in the most common MOSFET models such as BSIM, MM9 etc, without introducing large number of empirical parameters. Various physical effects that needed to be considered while modeling UDSM devices: quantization of the inversion layer, mobility degradation, carrier velocity saturation and overshoot, polydepletion effects, bias dependent source/drain resistances and capacitances, vertical and lateral doping profiles, etc. In this paper, we will discuss the progress in the CMOS technology and the anticipated difficulties of the sub-0.25 mm LSI downsizing. Subsequently, basic MOSFET modeling methodologies that are more appropriate for UDSM MOSFETs will be presented as well. The advances in compact MOSFET devices will be illustrated using application examples of the EPFL EKV model.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:1641 ; ISSN 1509-4553, on-line: ISSN 1899-8852

DOI:

10.26636/jtit.2000.3-4.29

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

MOSFET matching ultra deep submicron (UDSM) technology EKV MOS transistor model low power and RF applications compactmodeling

Object collections:

Last modified:

May 16, 2024

In our library since:

May 20, 2014

Number of object content hits:

142

All available object's versions:

https://bc.itl.waw.pl/publication/1841

Show description in RDF format:

RDF

Show description in OAI-PMH format:

OAI-PMH

Edition name Date
Grabiński, Władysław; Bucher, Matthias; Sallese, Jean-Michel; Krummenacher, Francçis, Advanced compact modeling of the deep submicron technologies, Journal of Telecommunications and Information Technology, 2000, nr 3,4 May 16, 2024

Objects Similar
Standardization of the compact model coding: non-fully depleted SOI MOSFET example, Journal of Telecommunications and Information Technology, 2005, nr 1

Jakubowski, Andrzej Tomaszewski, Daniel Grabiński, Władysław Lemaitre, Laurent

2005, nr 1
artykuł
Large-Signal RF Modeling with the EKV3 MOSFET Model, Journal of Telecommunications and Information Technology, 2010, nr 1

Chalkiadaki, Maria-Anna Bucher, Matthias

2010, nr 1
artykuł
Topological Synthesis of Tree Shaped Structures Based on a Building Blocks Hypothesis Journal of Telecommunications and Information Technology, 2011, nr 4

Miazga, Przemysław

2011, nr 4
artykuł
Recent developments in vertical MOSFETs and SiGe HBTs, Journal of Telecommunications and Information Technology, 2004, nr 1

Buiu, Octavian Hall, Stephen Ashburn, Peter Groot de, Kees

2004, nr 1
artykuł
Charge-pumping characterization of FILOX vertical MOSFETs, Journal of Telecommunications and Information Technology, 2007, nr 3

Ashburn, Peter Głuszko, Grzegorz Łukasiak, Lidia Gili, Enrico

2007, nr 3
artykuł
Direct extraction techniques of microwave small-signal model and technological parameters for sub-quarter micron SOI MOSFETs, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Raskin, Jean-Pierre Goffioul, Michël Vanhoenacker, Danielle

2000, nr 3,4
artykuł
Comparison of microwave performances for sub-quarter micron fully- and partially-depleted SOI MOSFETs, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Raskin, Jean-Pierre Goffioul, Michël Vanhoenacker, Danielle Dambrine, Gilles

2000, nr 3,4
artykuł
Silicon microelectronics: where we have come from and where we are heading, Journal of Telecommunications and Information Technology, 2004, nr 1

Jakubowski, Andrzej Łukasiak, Lidia Pióro, Zbigniew

2004, nr 1
artykuł
More
×

Citation

Citation style:

Contact details

Address

Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

Phone

(+48) 5128 696

E-Mail

biblioteka@il-pib.pl

Visit us!

This page uses 'cookies'. More information