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Title: Optimization of selectedp arameters of SiGe HBT transistors, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Creator:

Jakubowski, Andrzej ; Zaręba, Agnieszka

Date:

2000, nr 3,4

Resource Type:

artykuł

Description:

SiGe-base HBTs with Gaussian doping distribution are modeled including the effect of the drift field and variable Ge concentration in the base on the diffusion coefficient. Two different Ge distributions in the base are considered: a triangular one and a box one.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:1639 ; ISSN 1509-4553, on-line: ISSN 1899-8852

DOI:

10.26636/jtit.2000.3-4.31

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

heterojunction bipolar transistor base transit time current gain

Object collections:

Last modified:

May 16, 2024

In our library since:

May 20, 2014

Number of object content hits:

126

All available object's versions:

https://bc.itl.waw.pl/publication/1839

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Edition name Date
Zaręba, Agnieszka; Jakubowski, Andrzej, Optimization of selectedp arameters of SiGe HBT transistors, Journal of Telecommunications and Information Technology, 2000, nr 3,4 May 16, 2024

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

Phone

(+48) 5128 696

E-Mail

biblioteka@il-pib.pl

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