Title:

Evaluation of MOSFETs with crystalline high-k gate-dielectrics: device simulation and experimental data, Journal of Telecommunications and Information Technology, 2007, nr 2

Creator:

Schwalke, Udo ; Zaunert, Florian ; Endres, Ralf ; Stefanov, Yordan

Subject and Keywords:

MEDICI ; gadolinium oxide ; praseodymium oxide ; crystalline high-k gate dielectric ; remote coulomb scattering ; TSUPREM4 ; interface state density ; carrier mobility ; CMP ; CMOS process ; damascene metal gate ; rare-earth oxide

Description:

The evaluation of the world’s first MOSFETs with epitaxially-grown rare-earth high-k gate dielectrics is the main issue of this work. Electrical device characterization has been performed on MOSFETs with high-k gate oxides as well as their reference counterparts with silicon dioxide gate dielectric. In addition, by means of technology simulation with TSUPREM4, models of these devices are established. Current-voltage characteristics and parameter extraction on the simulated structures is conducted with the device simulator MEDICI. Measured and simulated device characteristics are presented and the impact of interface state and fixed charge densities is discussed. Device parameters of high-k devices fabricated with standard poly-silicon gate and replacement metal gate process are compared.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Date:

2007, nr 2

Resource Type:

artykuł

Format:

application/pdf

Resource Identifier:

ISSN 1509-4553, on-line: ISSN 1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności