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Schwalke, Udo ; Zaunert, Florian ; Endres, Ralf ; Stefanov, Yordan
2007, nr 2
artykuł
The evaluation of the world’s first MOSFETs with epitaxially-grown rare-earth high-k gate dielectrics is the main issue of this work. Electrical device characterization has been performed on MOSFETs with high-k gate oxides as well as their reference counterparts with silicon dioxide gate dielectric. In addition, by means of technology simulation with TSUPREM4, models of these devices are established. Current-voltage characteristics and parameter extraction on the simulated structures is conducted with the device simulator MEDICI. Measured and simulated device characteristics are presented and the impact of interface state and fixed charge densities is discussed. Device parameters of high-k devices fabricated with standard poly-silicon gate and replacement metal gate process are compared.
Instytut Łączności - Państwowy Instytut Badawczy, Warszawa
application/pdf
oai:bc.itl.waw.pl:270
10.26636/jtit.2007.2.812
1509-4553
1899-8852
Journal of Telecommunications and Information Technology
ang
Biblioteka Naukowa Instytutu Łączności
Jul 24, 2024
Jan 22, 2010
184
https://bc.itl.waw.pl/publication/312
RDF
OAI-PMH
Schwalke, Udo
Citation style: Chicago ISO690
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