Title:

Comparison of composition of ultra-thin silicon oxynitride layers’ fabricated by PECVD and ultrashallow rf plasma ion implantation, Journal of Telecommunications and Information Technology, 2007, nr 3

Creator:

Beck, Romuald B. ; Ćwil, Michał ; Konarski, Piotr ; Bieniek, Tomasz ; Schmeißer, Dieter ; Hoffmann, Patrick ; Mroczyński, Robert

Subject and Keywords:

oxynitride ; PECVD ; ultra-thin dielectrics ; SIMS ; XPS

Description:

In this paper differences in chemical composition of ultra-thin silicon oxynitride layers fabricated in planar rf plasma reactor are studied. The ultra-thin dielectric layers were obtained in the same reactor by two different methods: ultrashallow nitrogen implantation followed by plasma oxidation and plasma enhanced chemical vapour deposition (PECVD). Chemical composition of silicon oxynitride layers was investigated by means of X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). The spectroscopic ellipsometry was used to determine both the thickness and refractive index of the obtained layers. The XPS measurements show considerable differences between the composition of the fabricated layers using each of the above mentioned methods. The SIMS analysis confirms XPS results and indicates differences in nitrogen distribution.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Date:

2007, nr 3

Resource Type:

artykuł

Format:

application/pdf

Resource Identifier:

ISSN 1509-4553, on-line: ISSN 1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności