Tytuł:

Modeling of the inverse base width modulation effect in HBT transistor with graded SiGe base, Journal of Telecommunications and Information Technology, 2007, nr 3

Autor:

Jakubowski, Andrzej ; Łukasiak, Lidia ; Zaręba, Agnieszka

Temat i słowa kluczowe:

SiGe ; base width modulation ; heterojunction bipolar transistor

Opis:

A model of the position of the edge of emitter-base junction in the base and collector current pre-exponential ideality factor in HBT transistor with a SiGe base is presented. The model is valid for transistors with nonuniform profiles of doping and Ge content. The importance of taking into account the dependence of the effective density of states in SiGe on local Ge content and that of electron diffusion coefficient in SiGe on drift field for modeling accuracy is studied.

Wydawca:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Data wydania:

2007, nr 3

Typ zasobu:

artykuł

Format:

application/pdf

DOI:

10.26636/jtit.2007.3.836

ISSN:

1509-4553

eISSN:

1899-8852

Źródło:

Journal of Telecommunications and Information Technology

Język:

ang

Prawa:

Biblioteka Naukowa Instytutu Łączności