Tytuł:

Properties of Al contacts to Si surface exposed in the course of plasma etching of previously grown nanocrystalline c-BN lm, Journal of Telecommunications and Information Technology, 2005, nr 1

Autor:

Szmidt, Jan ; Werbowy, Aleksander ; Firek, Piotr ; Olszyna, Andrzej R.

Temat i słowa kluczowe:

electric contacts ; cubic boron nitride ; plasma etching

Opis:

Properties of Al electric contacts to Si(p) surface exposed to fluorine-based plasma etching of nanocrystalline cubic boron nitride (c-BN) _lm grown previously were studied and compared to the properties of Al contacts fabricated on pristine or dry etched surface of Si(p) wafers. In addition, a part of the investigated samples was annealed in nitrogen atmosphere at the temperature of 673 K. Analysis of contract properties is based on current-voltage (I-V) measurements of the produced Al-Si structures. The presented investigations were performed in order to evaluate the efficiency of the applied plasma etching method of nanocrystalline c-BN from the viewpoint of its influence on the properties of metal contacts formed subsequently and thus on the performance of electronic devices involving the use of boron nitride.

Wydawca:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Data wydania:

2005, nr 1

Typ zasobu:

artykuł

Format:

application/pdf

DOI:

10.26636/jtit.2005.1.289

ISSN:

1509-4553

eISSN:

1899-8852

Źródło:

Journal of Telecommunications and Information Technology

Język:

ang

Prawa:

Biblioteka Naukowa Instytutu Łączności