This publication is unavailable to your account. If you have more privileged account please try to use it or contact with the institution connected to this digital library.
Iniguez, Benjamin ; Fjeldly, Tor A. ; Osthaug, Jarle
2004, nr 1
artykuł
Closed-form 2D modeling of deep-submicron and sub-100 nm MOSFETs is explored using a conformal mapping technique where the 2D Poisson equation in the depletion regions is separated into a 1D long-channel case and a 2D Laplace equation. The 1D solution defines the boundary potential values for the Laplacian, which in turn provides a 2D correction of the channel potential. The model has been tested for classical MOSFETs with gate lengths in the range 200{250 nm, and for a super-steep retrograde MOSFET with a gate length of 70 nm. With a minimal parameter set, the present modeling reproduces both qualitatively and qualitatively the experimental data obtained for such devices.
Instytut Łączności - Państwowy Instytut Badawczy, Warszawa
application/pdf
oai:bc.itl.waw.pl:514
10.26636/jtit.2004.1.227
1509-4553
1899-8852
Journal of Telecommunications and Information Technology
ang
Biblioteka Naukowa Instytutu Łączności
Jun 4, 2024
Mar 10, 2010
182
https://bc.itl.waw.pl/publication/574
RDF
OAI-PMH
Citation style: Chicago ISO690
This page uses 'cookies'. More information I understand