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Title: Comparison of gate leakage current components in metal-insulator-semiconductor structures with high-k gate dielectrics, Journal of Telecommunications and Information Technology, 2001, nr 1

Creator:

Jakubowski, Andrzej ; Majkusiak, Bogdan ; Korwin-Pawłowski, Michał ; Janik, Tomasz

Date:

2001, nr 1

Resource Type:

artykuł

Description:

Numerical simulations of the gate leakage current in metal-insulator-semiconductor (MIS) structures based on the transfer matrix approach were carried out. They show contribution of different components of this current in MIS structures with best known high-k dielectrics such as Ta2O5 and TiO2. The comparison of the gate leakage current in MIS structures with SiO2 layer as well Ta2O5 and TiO2 layers is presented as well. Additionally, the minimum Si electron affinity to a gate dielectric which allows to preserve given level of the gate leakage current is proposed.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:691 ; ISSN 1509-4553, on-line: ISSN 1899-8852

DOI:

10.26636/jtit.2001.1.38

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

high-k di-electrics MIS structures ultrathin dielectrics

Object collections:

Last modified:

May 20, 2024

In our library since:

Apr 27, 2010

Number of object content hits:

293

All available object's versions:

https://bc.itl.waw.pl/publication/767

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Edition name Date
Janik, Tomasz; Jakubowski, Andrzej; Majkusiak, Bogdan; Korwin-Pawłowski, Michał, Comparison of gate leakage current components in metal-insulator-semiconductor structures with high-k gate dielectrics, Journal of Telecommunications and Information Technology, 2001, nr 1 May 20, 2024

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

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(+48) 5128 696

E-Mail

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