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Title: Oxidation kinetic sof silicon strained by silicon germanium, Journal of Telecommunications and Information Technology, 2007, nr 3

Creator:

Beck, Romuald B. ; Grabowski, Jarosław

Date:

2007, nr 3

Resource Type:

artykuł

Description:

This paper reports on the studies of oxidation kinetics of silicon strained by silicon germanium layers. Experimental results of natural, chemical and thermal oxide formation are presented. The oxidation rates of silicon strained by SiGe layers have been compared with the rates of pure Si oxidation. The oxidation kinetics was studied using the parallel model proposed by Beck and Majkusiak. This model was fitted with good result to the obtained experimental data and the parameter that is most probably responsible for the strain effect was identified, as well as its dependence on Ge content in the SiGe layer.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:281

DOI:

10.26636/jtit.2007.3.824

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

silicon germanium modeling kinetics oxidation silicon

Object collections:

Last modified:

Jul 24, 2024

In our library since:

Jan 27, 2010

Number of object content hits:

448

All available object's versions:

https://bc.itl.waw.pl/publication/324

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Edition name Date
Grabowski, Jarosław; Beck, Romuald B., Oxidation kinetic sof silicon strained by silicon germanium, Journal of Telecommunications and Information Technology, 2007, nr 3 Jul 24, 2024

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

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(+48) 5128 696

E-Mail

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