Advanced search ?

Object

Download

Title: Oxidation kinetic sof silicon strained by silicon germanium, Journal of Telecommunications and Information Technology, 2007, nr 3

Creator:

Beck, Romuald B. ; Grabowski, Jarosław

Date:

2007, nr 3

Resource Type:

artykuł

Description:

This paper reports on the studies of oxidation kinetics of silicon strained by silicon germanium layers. Experimental results of natural, chemical and thermal oxide formation are presented. The oxidation rates of silicon strained by SiGe layers have been compared with the rates of pure Si oxidation. The oxidation kinetics was studied using the parallel model proposed by Beck and Majkusiak. This model was fitted with good result to the obtained experimental data and the parameter that is most probably responsible for the strain effect was identified, as well as its dependence on Ge content in the SiGe layer.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:281

DOI:

10.26636/jtit.2007.3.824

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

silicon germanium modeling kinetics oxidation silicon

Object collections:

Last modified:

Jul 24, 2024

In our library since:

Jan 27, 2010

Number of object content hits:

444

All available object's versions:

https://bc.itl.waw.pl/publication/324

Show description in RDF format:

RDF

Show description in OAI-PMH format:

OAI-PMH

Edition name Date
Grabowski, Jarosław; Beck, Romuald B., Oxidation kinetic sof silicon strained by silicon germanium, Journal of Telecommunications and Information Technology, 2007, nr 3 Jul 24, 2024

Objects Similar
Artificial adaptive agent model characterized by learning and fairness in the ultimatum games, Journal of Telecommunications and Information Technology, 2007, nr 4

Nishizaki, Ichiro Katagiri, Hideki Hayashida, Tomohiro

2007, nr 4
artykuł
Challenges in ultrathin oxide layers formation, Journal of Telecommunications and Information Technology, 2001, nr 1

Jakubowski, Andrzej Beck, Romuald B. Łukasiak, Lidia Korwin-Pawłowski, Michał

2001, nr 1
artykuł
Silicon-germanium for ULSI, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Halll, Steve Eccleston, Bill

2000, nr 3,4
artykuł
Low frequency noise in Si and Si/SiGe/Si PMOSFETs, Journal of Telecommunications and Information Technology, 2007, nr 2

Grasby, Tim J. Bacon, Adam R. Parker, Evan H. C. Fulgoni, Dominic J. F. Leadley, David R. Thomas, Stephen M. Whall, Terence E. Prest, Martin J.

2007, nr 2
artykuł
Challenges for 10 nm MOSFET process integration, Journal of Telecommunications and Information Technology, 2007, nr 2

Hellström, Per-Erik Haartman von, Martin Östling, Mikael Zhang, Zhen Hallstedt, Julius Zhang, Shili Malm, Bengt Gunnar

2007, nr 2
artykuł
Adsorption properties of porous silicon, Journal of Telecommunications and Information Technology, 2001, nr 1

Beck, Romuald B. Grabiec, Piotr Gotszalk, Teodor Rangelow, Ivo W. Domański, Krzysztof Dębski, Tomasz

2001, nr 1
artykuł
The role of fluorine-containing ultra-thin layer in controlling boron thermal diffusion into silicon, Journal of Telecommunications and Information Technology, 2007, nr 3

Beck, Romuald B. Ćwil, Michał Kalisz, Małgorzata Barcz, Adam

2007, nr 3
artykuł
The influence of annealing (900◦C) of ultra-thin PECVD silicon oxynitride layers, Journal of Telecommunications and Information Technology, 2007, nr 3

Jakubowski, Andrzej Beck, Romuald B. Ćwil, Michał Głuszko, Grzegorz Konarski, Piotr Schmeißer, Dieter Hoffmann, Patrick Mroczyński, Robert

2007, nr 3
artykuł
More
×

Citation

Citation style:

Contact details

Address

Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

Phone

(+48) 5128 696

E-Mail

biblioteka@il-pib.pl

Visit us!

This page uses 'cookies'. More information