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Title: Scattering mechanisms in MOS/SOI devices with ultrathin semiconductor layers, Journal of Telecommunications and Information Technology, 2004, nr 1

Creator:

Walczak, Jakub ; Majkusiak, Bogdan

Date:

2004, nr 1

Resource Type:

artykuł

Description:

Main scattering mechanisms a ecting electron transport in MOS/SOI devices are considered within the quantum-mechanical approach. Electron mobility components (i.e., phonon, Coulomb and interface roughness limited mobilities) are calculated for ultrathin symmetrical DG SOI transistor, employing the relaxation time approximation, and the effective electron mobility is obtained showing possible mobility increase relative to the conventional MOSFET in the rangeof the active semiconductor layer thickness of about 3 nm.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:511

DOI:

10.26636/jtit.2004.1.230

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

scattering mechanisms electronmobility ultrathin SOI

Object collections:

Last modified:

Jun 4, 2024

In our library since:

Mar 10, 2010

Number of object content hits:

425

All available object's versions:

https://bc.itl.waw.pl/publication/571

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Edition name Date
Walczak, Jakub; Majkusiak, Bogdan, Scattering mechanisms in MOS/SOI devices with ultrathin semiconductor layers, Journal of Telecommunications and Information Technology, 2004, nr 1 Jun 4, 2024

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