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Search for: [Subject and Keywords = "MOSFET"]

Number of results: 22

Items per page:
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Charge-pumping characterization of FILOX vertical MOSFETs, Journal of Telecommunications and Information Technology, 2007, nr 3

Ashburn, Peter Głuszko, Grzegorz Łukasiak, Lidia Gili, Enrico

2007, nr 3
artykuł
Recent developments in vertical MOSFETs and SiGe HBTs, Journal of Telecommunications and Information Technology, 2004, nr 1

Buiu, Octavian Hall, Stephen Ashburn, Peter Groot de, Kees

2004, nr 1
artykuł
Direct extraction techniques of microwave small-signal model and technological parameters for sub-quarter micron SOI MOSFETs, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Raskin, Jean-Pierre Goffioul, Michël Vanhoenacker, Danielle

2000, nr 3,4
artykuł
Comparison of microwave performances for sub-quarter micron fully- and partially-depleted SOI MOSFETs, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Raskin, Jean-Pierre Goffioul, Michël Vanhoenacker, Danielle Dambrine, Gilles

2000, nr 3,4
artykuł
Electron mobility and drain current in strained-Si MOSFET, Journal of Telecommunications and Information Technology, 2007, nr 3

Walczak, Jakub Majkusiak, Bogdan

2007, nr 3
artykuł
Silicon microelectronics: where we have come from and where we are heading, Journal of Telecommunications and Information Technology, 2004, nr 1

Jakubowski, Andrzej Łukasiak, Lidia Pióro, Zbigniew

2004, nr 1
artykuł
High-temperature instability processes in SOI structures and MOSFETs, Journal of Telecommunications and Information Technology, 2001, nr 1

Nazarov, Alexei N. Kilchytska, V. I. Colinge, J. P. Vovk, Ja. N.

2001, nr 1
artykuł
A model of partially-depleted SOI MOSFETs in the subthreshold range, Journal of Telecommunications and Information Technology, 2001, nr 1

Jakubowski, Andrzej Tomaszewski, Daniel Łukasiak, Lidia Domański, Krzysztof

2001, nr 1
artykuł
Standardization of the compact model coding: non-fully depleted SOI MOSFET example, Journal of Telecommunications and Information Technology, 2005, nr 1

Jakubowski, Andrzej Tomaszewski, Daniel Grabiński, Władysław Lemaitre, Laurent

2005, nr 1
artykuł
An impact of frequency on capacitances of partially-depleted SOI MOSFETs, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Jakubowski, Andrzej Tomaszewski, Daniel Łukasiak, Lidia Zaręba, Agnieszka

2000, nr 3,4
artykuł
An impact of physical phenomena on admittances of partially-depleted SOI MOSFETs, Journal of Telecommunications and Information Technology, 2001, nr 1

Jakubowski, Andrzej Tomaszewski, Daniel Łukasiak, Lidia Gibki, Jan

2001, nr 1
artykuł
Low frequency noise in Si and Si/SiGe/Si PMOSFETs, Journal of Telecommunications and Information Technology, 2007, nr 2

Grasby, Tim J. Bacon, Adam R. Parker, Evan H. C. Fulgoni, Dominic J. F. Leadley, David R. Thomas, Stephen M. Whall, Terence E. Prest, Martin J.

2007, nr 2
artykuł
Development of 3C-SiC MOSFETs, Journal of Telecommunications and Information Technology, 2007, nr 2

Ericsson, Per Nagasawa, Hiroyuki Abe, Masayuki Strömberg, Helena Schöner, Adolf Bakowski, Mietek

2007, nr 2
artykuł
Characterization of SOI MOSFETs by means of charge-pumping, Journal of Telecommunications and Information Technology, 2007, nr 3

Głuszko, Grzegorz Łukasiak, Lidia Gottlob, Heinrich Lemme, Max Szostak, Sławomir

2007, nr 3
artykuł
The Impact of Externally Applied Mechanical Stress on Analog and RF Performances of SOI MOSFETs, Journal of Telecommunications and Information Technology, 2009, nr 4

Raskin, Jean-Pierre Vanhoenacker-Janvier, Danielle Emam, Mostafa Houri, Samer

2009, nr 4
artykuł
On-wafer wideband characterization: a powerful tool for improving the IC technologies, Journal of Telecommunications and Information Technology, 2007, nr 2

Raskin, Jean-Pierre Lederer, Dimitri

2007, nr 2
artykuł
Closed-form 2D modeling of sub-100 nm MOSFETs in the subthreshold regime, Journal of Telecommunications and Information Technology, 2004, nr 1

Iniguez, Benjamin Fjeldly, Tor A. Osthaug, Jarle

2004, nr 1
artykuł
DC and low-frequency noise analysis for buried SiGe channel metamorphic PMOSFETs with high Ge content, Journal of Telecommunications and Information Technology, 2005, nr 1

Parker, Evan H. C. Whall, Terence E. König, Ulf Känel, von Hans Hoeck, Georg Herzog, Hans-Joest Myronov, Maksym Durov, Sergiy Hackbarth, Thomas Mironov, Oleg A.

2005, nr 1
artykuł
Large-Signal RF Modeling with the EKV3 MOSFET Model, Journal of Telecommunications and Information Technology, 2010, nr 1

Chalkiadaki, Maria-Anna Bucher, Matthias

2010, nr 1
artykuł
Advanced compact modeling of the deep submicron technologies, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Grabiński, Władysław Bucher, Matthias Sallese, Jean-Michel Krummenacher, Francçis

2000, nr 3,4
artykuł
Comparison of 4H-SiC and 6H-SiC MOSFET I-V characteristic ssimulated with Silvaco Atlas and Crosslight Apsys, Journal of Telecommunications and Information Technology, 2007, nr 3

Jakubowski, Andrzej Korwin-Pawlowski, Michael L. Stęszewski, Jędrzej

2007, nr 3
artykuł
Special size effects in advanced single-gate and multiple-gate SOI transistors, Journal of Telecommunications and Information Technology, 2007, nr 2

Faynot, Olivier Ohata, Akiko Ritzenthaler, Romain Cristoloveanu, Sorin

2007, nr 2
artykuł

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