Instytut Łączności – Państwowy Instytut Badawczy

Characterization of SOI fabrication process using gated-diode measurements and TEM studies, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Jakubowski, Andrzej Tomaszewski, Daniel Łukasiak, Lidia Gibki, Jan Ratajczak, Jacek Kątcki, Jerzy

2000, nr 3,4

artykuł

Grain boundary effect on the anisotropy piezoresistance of laser-recrystallized polysilicon layers in SOI-structures, Journal of Telecommunications and Information Technology, 2001, nr 1

Druzhinin, Anatoly Pankov, Yury

2001, nr 1

artykuł

Recent developments in vertical MOSFETs and SiGe HBTs, Journal of Telecommunications and Information Technology, 2004, nr 1

Buiu, Octavian Hall, Stephen Ashburn, Peter Groot de, Kees

2004, nr 1

artykuł

Direct extraction techniques of microwave small-signal model and technological parameters for sub-quarter micron SOI MOSFETs, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Raskin, Jean-Pierre Goffioul, Michël Vanhoenacker, Danielle

2000, nr 3,4

artykuł

Comparison of microwave performances for sub-quarter micron fully- and partially-depleted SOI MOSFETs, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Raskin, Jean-Pierre Goffioul, Michël Vanhoenacker, Danielle Dambrine, Gilles

2000, nr 3,4

artykuł

Silicon microelectronics: where we have come from and where we are heading, Journal of Telecommunications and Information Technology, 2004, nr 1

Jakubowski, Andrzej Łukasiak, Lidia Pióro, Zbigniew

2004, nr 1

artykuł

Scattering mechanisms in MOS/SOI devices with ultrathin semiconductor layers, Journal of Telecommunications and Information Technology, 2004, nr 1

Walczak, Jakub Majkusiak, Bogdan

2004, nr 1

artykuł

High-temperature instability processes in SOI structures and MOSFETs, Journal of Telecommunications and Information Technology, 2001, nr 1

Nazarov, Alexei N. Kilchytska, V. I. Colinge, J. P. Vovk, Ja. N.

2001, nr 1

artykuł

Reliability of deep submicron MOSFETs, Journal of Telecommunications and Information Technology, 2001, nr 1

Balestra, Francis

2001, nr 1

artykuł

On possibility to extend the operation temperature range of SOI sensors with polysilicon piezoresistors, Journal of Telecommunications and Information Technology, 2001, nr 1

Kogut, Igor Maryamova, Inna Lavitska, Elena Khoverko, Yuri Druzhinin, Anatoly

2001, nr 1

artykuł

A model of partially-depleted SOI MOSFETs in the subthreshold range, Journal of Telecommunications and Information Technology, 2001, nr 1

Jakubowski, Andrzej Tomaszewski, Daniel Łukasiak, Lidia Domański, Krzysztof

2001, nr 1

artykuł

TSSOI as an efficient tool for diagnostics of SOI technology in Institute of Electron Technology, Journal of Telecommunications and Information Technology, 2005, nr 1

Tomaszewski, Daniel Jaroszewicz, Bohdan Grabiec, Piotr Marczewski, Jacek Barański, Mateusz Domański, Krzysztof Kucharski, Krzysztof Kucewicz, Wojciech Grodner, Mirosław Sapor, Maria Kociubiński, Andrzej Niemiec, Halina

2005, nr 1

artykuł

Standardization of the compact model coding: non-fully depleted SOI MOSFET example, Journal of Telecommunications and Information Technology, 2005, nr 1

Jakubowski, Andrzej Tomaszewski, Daniel Grabiński, Władysław Lemaitre, Laurent

2005, nr 1

artykuł

An impact of frequency on capacitances of partially-depleted SOI MOSFETs, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Jakubowski, Andrzej Tomaszewski, Daniel Łukasiak, Lidia Zaręba, Agnieszka

2000, nr 3,4

artykuł

An impact of physical phenomena on admittances of partially-depleted SOI MOSFETs, Journal of Telecommunications and Information Technology, 2001, nr 1

Jakubowski, Andrzej Tomaszewski, Daniel Łukasiak, Lidia Gibki, Jan

2001, nr 1

artykuł

Characterization of SOI MOSFETs by means of charge-pumping, Journal of Telecommunications and Information Technology, 2007, nr 3

Głuszko, Grzegorz Łukasiak, Lidia Gottlob, Heinrich Lemme, Max Szostak, Sławomir

2007, nr 3

artykuł

The Impact of Externally Applied Mechanical Stress on Analog and RF Performances of SOI MOSFETs, Journal of Telecommunications and Information Technology, 2009, nr 4

Raskin, Jean-Pierre Vanhoenacker-Janvier, Danielle Emam, Mostafa Houri, Samer

2009, nr 4

artykuł

SOI nanodevices and materials for CMOS ULSI, Journal of Telecommunications and Information Technology, 2007, nr 2

Balestra, Francis

2007, nr 2

artykuł

Optimization of an integrated optical crossbar in SOI technology for optical networks on chip, Journal of Telecommunications and Information Technology, 2007, nr 3

Gaffiot, Frederic Lisik, Zbigniew Rojo-Romeo, Pedro Kaźmierczak, Andrzej O’Connor, Ian Letartre, Xavier Briere, Matthieu Drouard, Emmanuel

2007, nr 3

artykuł

Charge-pumping characterization of SOI devices fabricated by means of wafer bonding over pre-patterned cavities, Journal of Telecommunications and Information Technology, 2007, nr 3

Raskin, Jean-Pierre Głuszko, Grzegorz Łukasiak, Lidia Olbrechts, Benoit Kilchytska, Valeriya Flandre, Denis Chung, Tsung Ming

2007, nr 3

artykuł

Low frequency noise in advanced Si bulk and SOI MOSFETs, Journal of Telecommunications and Information Technology, 2005, nr 1

Balestra, Francis Ghibaudo, Gérard Jomaah, Jalal

2005, nr 1

artykuł

Challenges for 10 nm MOSFET process integration, Journal of Telecommunications and Information Technology, 2007, nr 2

Hellström, Per-Erik Haartman von, Martin Östling, Mikael Zhang, Zhen Hallstedt, Julius Zhang, Shili Malm, Bengt Gunnar

2007, nr 2

artykuł

Special size effects in advanced single-gate and multiple-gate SOI transistors, Journal of Telecommunications and Information Technology, 2007, nr 2

Faynot, Olivier Ohata, Akiko Ritzenthaler, Romain Cristoloveanu, Sorin

2007, nr 2

artykuł

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