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Title: SOI nanodevices and materials for CMOS ULSI, Journal of Telecommunications and Information Technology, 2007, nr 2

Creator:

Balestra, Francis

Date:

2007, nr 2

Resource Type:

artykuł

Description:

A review of recently explored new effects in SOI nanodevices and materials is given. Recent advances in the understanding of the sensitivity of electron and hole transport to the tensile or compressive uniaxial and biaxial strains in thin film SOI are presented. The performance and physical mechanisms are also addressed in multi-gate Si, SiGe and Ge MOSFETs. The impact of gate misalignment or underlap, as well as the use of the back gate for charge storage in double-gate nanodevices and of capacitorless DRAMare also outlined.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:247

DOI:

10.26636/jtit.2007.2.803

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

tunneling current mobility enhancement gate misalignment GIFBE SOI ballistic transport strain engineering

Object collections:

Last modified:

Jul 23, 2024

In our library since:

Jan 8, 2010

Number of object content hits:

216

All available object's versions:

https://bc.itl.waw.pl/publication/282

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Edition name Date
Balestra, Francis, SOI nanodevices and materials for CMOS ULSI, Journal of Telecommunications and Information Technology, 2007, nr 2 Jul 23, 2024

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

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(+48) 5128 696

E-Mail

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