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Title: Charge-pumping characterization of SOI devices fabricated by means of wafer bonding over pre-patterned cavities, Journal of Telecommunications and Information Technology, 2007, nr 3

Creator:

Raskin, Jean-Pierre ; Głuszko, Grzegorz ; Łukasiak, Lidia ; Olbrechts, Benoit ; Kilchytska, Valeriya ; Flandre, Denis ; Chung, Tsung Ming

Date:

2007, nr 3

Resource Type:

artykuł

Description:

The quality of the silicon-buried oxide bonded interface of SOI devices created by thin Si film transfer and bonding over pre-patterned cavities, aiming at fabrication of DG and SON MOSFETs, is studied by means of chargepumping (CP) measurements. It is demonstrated that thanks to the chemical activation step, the quality of the bonded interface is remarkably good. Good agreement between values of front-interface threshold voltage determined from CP and I-V measurements is obtained.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

ISSN 1509-4553, on-line: ISSN 1899-8852 ; oai:bc.itl.waw.pl:288

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

SOI Si layer transfer wafer bonding interface traps electrical characterization charge-pumping

Object collections:

Last modified:

Jun 1, 2015

In our library since:

Jan 27, 2010

Number of object content hits:

461

All available object's versions:

https://bc.itl.waw.pl/publication/331

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Edition name Date
Głuszko, Grzegorz; Łukasiak, Lidia; Kilchytska, Valeriya; Chung, Tsung Ming; Olbrechts, Benoit; Flandre, Denis, Charge-pumping characterization of SOI devices fabricated by means of wafer bonding over pre-patterned cavities, Journal of Telecommunications and Information Technology, 2007, nr 3 Jun 1, 2015

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

Phone

(+48) 5128 696

E-Mail

biblioteka@il-pib.pl

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