Advanced search ?

Object

Download

Title: Evolution and recent advances in RF/microwave transistors, Journal of Telecommunications and Information Technology, 2004, nr 1

Creator:

Schwierz, Frank ; Liou, Juin J.

Date:

2004, nr 1

Resource Type:

artykuł

Description:

Most applications for radio frequency/microwave (thereafter called RF) transistors had been military oriented in the early 1980s. Recently, this has been changed drastically due to the explosive growth of the markets for civil wireless communication systems. This paper gives an overview on the evolution, current status, and future trend of transistors used in RF electronic systems. Important background, development and major milestones leading to modern RF transistors are presented. The concept of heterostructure, a feature frequently used in RF transistors, is discussed. The different transistor types and their figures of merit are then addressed. Finally an outlook of expected future developments and applications of RF transistors is given.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:517

DOI:

10.26636/jtit.2004.1.224

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

HBT RF CMOS microwave devices heterostructures HEMT RF devices frequency limits

Object collections:

Last modified:

Jun 4, 2024

In our library since:

Mar 10, 2010

Number of object content hits:

923

All available object's versions:

https://bc.itl.waw.pl/publication/577

Show description in RDF format:

RDF

Show description in OAI-PMH format:

OAI-PMH

Edition name Date
Liou, Juin J.; Schwierz, Frank, Evolution and recent advances in RF/microwave transistors, Journal of Telecommunications and Information Technology, 2004, nr 1 Jun 4, 2024

Objects Similar
Direct extraction techniques of microwave small-signal model and technological parameters for sub-quarter micron SOI MOSFETs, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Raskin, Jean-Pierre Goffioul, Michël Vanhoenacker, Danielle

2000, nr 3,4
artykuł
Comparison of microwave performances for sub-quarter micron fully- and partially-depleted SOI MOSFETs, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Raskin, Jean-Pierre Goffioul, Michël Vanhoenacker, Danielle Dambrine, Gilles

2000, nr 3,4
artykuł
Recent developments in vertical MOSFETs and SiGe HBTs, Journal of Telecommunications and Information Technology, 2004, nr 1

Buiu, Octavian Hall, Stephen Ashburn, Peter Groot de, Kees

2004, nr 1
artykuł
An accurate prediction of high-frequency circuit behaviour, Journal of Telecommunications and Information Technology, 2005, nr 1

Yoshitomi, Sadayuki Kokatsu, Hideyuki Kojima, Kenji Kimijima, Hideki

2005, nr 1
artykuł
CVD growth of high speed SiGe HBTs using SiH4, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Landgren, Gunnar Radamson, Henry H. Grahn, Jan

2000, nr 3,4
artykuł
Low frequency noise in Si and Si/SiGe/Si PMOSFETs, Journal of Telecommunications and Information Technology, 2007, nr 2

Grasby, Tim J. Bacon, Adam R. Parker, Evan H. C. Fulgoni, Dominic J. F. Leadley, David R. Thomas, Stephen M. Whall, Terence E. Prest, Martin J.

2007, nr 2
artykuł
Silicon-germanium for ULSI, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Halll, Steve Eccleston, Bill

2000, nr 3,4
artykuł
Modeling SiGe-base HBT using APSYS 2000 - a 2D simulator, Journal of Telecommunications and Information Technology, 2004, nr 1

Jakubowski, Andrzej Łukasiak, Lidia Linkowski, Adam

2004, nr 1
artykuł
More
×

Citation

Citation style:

Contact details

Address

Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

Phone

(+48) 5128 696

E-Mail

biblioteka@il-pib.pl

Visit us!

This page uses 'cookies'. More information