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Search for: [Creator = "Beck, Romuald B."]

Number of results: 12

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Oxidation kinetic sof silicon strained by silicon germanium, Journal of Telecommunications and Information Technology, 2007, nr 3

Beck, Romuald B. Grabowski, Jarosław

2007, nr 3
artykuł
Ultrathin oxynitride films for CMOS technology, Journal of Telecommunications and Information Technology, 2004, nr 1

Jakubowski, Andrzej Beck, Romuald B.

2004, nr 1
artykuł
The Effect of High Temperature Annealing on Fluorine Distribution Profile and Electro-Physical Properties of Thin Gate Oxide Fluorinated by Silicon Dioxide RIE in CF4 Plasma, Journal of Telecommunications and Information Technology, 2010, nr 1

Beck, Romuald B. Głuszko, Grzegorz Kalisz, Małgorzata

2010, nr 1
artykuł
Novel Method of Improving Electrical Properties of Thin PECVD Oxide Films by Fluorination of Silicon Surface Region by RIE in RF CF4 Plasma, Journal of Telecommunications and Information Technology, 2010, nr 1

Beck, Romuald B. Głuszko, Grzegorz Kalisz, Małgorzata

2010, nr 1
artykuł
Challenges in ultrathin oxide layers formation, Journal of Telecommunications and Information Technology, 2001, nr 1

Jakubowski, Andrzej Beck, Romuald B. Łukasiak, Lidia Korwin-Pawłowski, Michał

2001, nr 1
artykuł
The role of fluorine-containing ultra-thin layer in controlling boron thermal diffusion into silicon, Journal of Telecommunications and Information Technology, 2007, nr 3

Beck, Romuald B. Ćwil, Michał Kalisz, Małgorzata Barcz, Adam

2007, nr 3
artykuł
Ultra-shallow nitrogen plasma implantation for ultra-thin silicon oxynitride (SiOxNy) layer formation, Journal of Telecommunications and Information Technology, 2005, nr 1

Jakubowski, Andrzej Beck, Romuald B. Bieniek, Tomasz Kudła, Andrzej

2005, nr 1
artykuł
Adsorption properties of porous silicon, Journal of Telecommunications and Information Technology, 2001, nr 1

Beck, Romuald B. Grabiec, Piotr Gotszalk, Teodor Rangelow, Ivo W. Domański, Krzysztof Dębski, Tomasz

2001, nr 1
artykuł
Comparison of composition of ultra-thin silicon oxynitride layers’ fabricated by PECVD and ultrashallow rf plasma ion implantation, Journal of Telecommunications and Information Technology, 2007, nr 3

Beck, Romuald B. Ćwil, Michał Konarski, Piotr Bieniek, Tomasz Schmeißer, Dieter Hoffmann, Patrick Mroczyński, Robert

2007, nr 3
artykuł
Composition and electrical properties of ultra-thin SiOxNy layers formed by rf plasma nitrogen implantation/plasma oxidation processes, Journal of Telecommunications and Information Technology, 2007, nr 3

Jakubowski, Andrzej Beck, Romuald B. Ćwil, Michał Konarski, Piotr Bieniek, Tomasz Schmeißer, Dieter Hoffmann, Patrick

2007, nr 3
artykuł
Applying shallow nitrogen implantation from rf plasma for dual gate oxide technology, Journal of Telecommunications and Information Technology, 2007, nr 3

Jakubowski, Andrzej Beck, Romuald B. Ćwil, Michał Głuszko, Grzegorz Konarski, Piotr Bieniek, Tomasz

2007, nr 3
artykuł
The influence of annealing (900◦C) of ultra-thin PECVD silicon oxynitride layers, Journal of Telecommunications and Information Technology, 2007, nr 3

Jakubowski, Andrzej Beck, Romuald B. Ćwil, Michał Głuszko, Grzegorz Konarski, Piotr Schmeißer, Dieter Hoffmann, Patrick Mroczyński, Robert

2007, nr 3
artykuł

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