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Title: Prospects and Development of Vertical Normally-off JFETs in SiC, Journal of Telecommunications and Information Technology, 2009, nr 4

Creator:

Bakowski, Mietek

Date:

2009, nr 4

Resource Type:

artykuł

Description:

This paper reviews the prospects of normally-off (N-off) JFET switch in SiC. The potential of selected vertical JFET concepts and all-JFET cascode solutions for N-off operation is analyzed using simulations. The performance of analyzed concepts is compared in terms of blocking voltage, specific on-state resistance, maximum output current density and switching performance in the temperature range from 25°C to 250°C. The main objective of the analysis is to ascertain consequences of different design and technology options for the total losses and high temperature performance of the devices.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

ISSN 1509-4553, on-line: ISSN 1899-8852 ; oai:bc.itl.waw.pl:470

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

SiC normally-off vertical JFET JFET cascode

Object collections:

Last modified:

Mar 8, 2010

In our library since:

Mar 8, 2010

Number of object content hits:

152

All available object's versions:

https://bc.itl.waw.pl/publication/528

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Edition name Date
Bakowski, Mietek, Prospects and Development of Vertical Normally-off JFETs in SiC, Journal of Telecommunications and Information Technology, 2009, nr 4 Mar 8, 2010

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

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(+48) 5128 696

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