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Title: Technology of MISFET with SiO2/BaTiO3 System as a Gate Insulator, Journal of Telecommunications and Information Technology, 2009, nr 4

Creator:

Szmidt, Jan ; Firek, Piotr

Date:

2009, nr 4

Resource Type:

artykuł

Description:

The properties of barium titanate (BaTiO3, BT), such as high dielectric constant and resistivity, allow it to find numerous applications in the field of microelectronics. In this work silicon metal-insulator-semiconductor field effect transistor (MISFET) structures with BaTiO3 thin films (containing La2O3 admixture) acting as gate insulator were investigated. The films were produced by means of radio frequency plasma sputtering (RF PS) of sintered BaTiO3 + La2O3 (2% wt.) target. In the paper transfer and output I−V, transconductance and output conductance characteristics of the obtained transistors are presented and discussed. Basic parameters of these devices, such as threshold voltage (VTH) are determined and discussed.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:474 ; ISSN 1509-4553, on-line: ISSN 1899-8852

DOI:

10.26636/jtit.2009.4.972

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

radio frequency plasma sputtering MISFET structures I–V characteristics barium titanate

Object collections:

Last modified:

Aug 27, 2024

In our library since:

Mar 8, 2010

Number of object content hits:

270

All available object's versions:

https://bc.itl.waw.pl/publication/532

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Edition name Date
Firek, Piotr; Szmidt, Jan, echnology of MISFET with SiO2/BaTiO3 System as a Gate Insulator, Journal of Telecommunications and Information Technology, 2009, nr 4 Aug 27, 2024

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

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