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Title: SOI Technology: An Opportunity for RF Designers?, Journal of Telecommunications and Information Technology, 2009, nr 4

Creator:

Raskin, Jean-Pierre

Date:

2009, nr 4

Resource Type:

artykuł

Description:

This last decade silicon-on-insulator (SOI) MOS-FET technology has demonstrated its potentialities for high frequency (reaching cutoff frequencies close to 500 GHz for n-MOSFETs) and for harsh environments (high temperature, radiation) commercial applications. For RF and system-onchip applications, SOI also presents the major advantage of providing high resistivity substrate capabilities, leading to substantially reduced substrate losses. Substrate resistivity values higher than 1 kΩ cm can easily be achieved and high resistivity silicon (HRS) is commonly foreseen as a promising substrate for radio frequency integrated circuits (RFIC) and mixed signal applications. In this paper, based on several experimental and simulation results the interest, limitations but also possible future improvements of the SOI MOS technology are presented.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

ISSN 1509-4553, on-line: ISSN 1899-8852 ; oai:bc.itl.waw.pl:468

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

wideband characterization silicon-on-insulator crosstalk MOS-FET nonlinearities high resistivity silicon substrate

Object collections:

Last modified:

Mar 8, 2010

In our library since:

Mar 8, 2010

Number of object content hits:

190

All available object's versions:

https://bc.itl.waw.pl/publication/526

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Edition name Date
Raskin, Jean-Pierre, SOI Technology: An Opportunity for RF Designers?, Journal of Telecommunications and Information Technology, 2009, nr 4 Mar 8, 2010

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Address

Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

Phone

(+48) 5128 696

E-Mail

biblioteka@il-pib.pl

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