Advanced search ?

Object

Download

Title: Recent developments in vertical MOSFETs and SiGe HBTs, Journal of Telecommunications and Information Technology, 2004, nr 1

Creator:

Buiu, Octavian ; Hall, Stephen ; Ashburn, Peter ; Groot de, Kees

Date:

2004, nr 1

Resource Type:

artykuł

Description:

There is a well recognised need to introduce new materials and device architectures to Si technology to achieve the objectives set by the international roadmap. This paper summarises our work in two areas: vertical MOSFETs, which can allow increased current drive per unit area of Si chip and SiGe HBT's in silicon-on-insulator technology, which bring together and promise to extend the very high frequency performance of SiGe HBT's with SOI-CMOS.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:509

DOI:

10.26636/jtit.2004.1.232

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

HBT SOI vertical MOSFET

Object collections:

Last modified:

Jun 4, 2024

In our library since:

Mar 10, 2010

Number of object content hits:

310

All available object's versions:

https://bc.itl.waw.pl/publication/569

Show description in RDF format:

RDF

Show description in OAI-PMH format:

OAI-PMH

Edition name Date
Hall, Stephen; Buiu, Octavian; Ashburn, Peter; Groot de, Kees, Recent developments in vertical MOSFETs and SiGe HBTs, Journal of Telecommunications and Information Technology, 2004, nr 1 Jun 4, 2024

Objects Similar
Charge-pumping characterization of FILOX vertical MOSFETs, Journal of Telecommunications and Information Technology, 2007, nr 3

Ashburn, Peter Głuszko, Grzegorz Łukasiak, Lidia Gili, Enrico

2007, nr 3
artykuł
Review and perspective of high-k dielectrics on silicon, Journal of Telecommunications and Information Technology, 2007, nr 2

Davey, William M. Lu, Yi Mitrovic, Ivona Z. Buiu, Octavian Hall, Stephen

2007, nr 2
artykuł
Development of 3C-SiC MOSFETs, Journal of Telecommunications and Information Technology, 2007, nr 2

Ericsson, Per Nagasawa, Hiroyuki Abe, Masayuki Strömberg, Helena Schöner, Adolf Bakowski, Mietek

2007, nr 2
artykuł
CVD growth of high speed SiGe HBTs using SiH4, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Landgren, Gunnar Radamson, Henry H. Grahn, Jan

2000, nr 3,4
artykuł
Silicon-germanium for ULSI, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Halll, Steve Eccleston, Bill

2000, nr 3,4
artykuł
Characterization of SOI fabrication process using gated-diode measurements and TEM studies, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Jakubowski, Andrzej Tomaszewski, Daniel Łukasiak, Lidia Gibki, Jan Ratajczak, Jacek Kątcki, Jerzy

2000, nr 3,4
artykuł
Grain boundary effect on the anisotropy piezoresistance of laser-recrystallized polysilicon layers in SOI-structures, Journal of Telecommunications and Information Technology, 2001, nr 1

Druzhinin, Anatoly Pankov, Yury

2001, nr 1
artykuł
Rare Earth Silicate Formation: A Route Towards High-k for the 22 nm Node and Beyond, Journal of Telecommunications and Information Technology, 2009, nr 4

Mitrovic, Ivona Z. Hall, Stephen

2009, nr 4
artykuł
More
×

Citation

Citation style:

Contact details

Address

Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

Phone

(+48) 5128 696

E-Mail

biblioteka@il-pib.pl

Visit us!

This page uses 'cookies'. More information