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Title: Photoelectric measurements of the local values of the effective contact potential difference in the MOS structure, Journal of Telecommunications and Information Technology, 2005, nr 1

Creator:

Kudła, Andrzej ; Brzezińska, Danuta ; Przewłocki, Henryk ; Borowicz, Lech

Date:

2005, nr 1

Resource Type:

artykuł

Description:

We have shown that using focused UV laser beam in photoelectric methods it is possible to measure local φMS values over the gate area of a single MOS structure. The φMS distribution is such that its values are highest far away from the gate edges regions, lower in the vicinity of gate edges and still lower in the vicinity of gate corners. Examples of measurement results and description of the measurement system are presented. The dependence of the φMS value on the exposure time and the power density of UV light is discussed.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:373

DOI:

10.26636/jtit.2005.1.283

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

photoelectrical methods MIS structure contact potential difference internal photoemission

Object collections:

Last modified:

Jun 12, 2024

In our library since:

Mar 1, 2010

Number of object content hits:

165

All available object's versions:

https://bc.itl.waw.pl/publication/423

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Edition name Date
Kudła, Andrzej; Przewłocki, Henryk; Brzezińska, Danuta; Borowicz, Lech, Photoelectric measurements of the local values of the effective contact potential difference in the MOS structure, Journal of Telecommunications and Information Technology, 2005, nr 1 Jun 12, 2024

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

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(+48) 5128 696

E-Mail

biblioteka@il-pib.pl

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