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Tytuł: High-field current transport and charge trapping in buried oxide of SOI materials under high-field electron injection, Journal of Telecommunications and Information Technology, 2004, nr 1

Autor:

Kilchytska, Valeriya ; Houk, Yuri ; Nazarov, Alexei N.

Data wydania:

2004, nr 1

Typ zasobu:

artykuł

Opis:

Mechanisms of the charge transfer, the charge trapping, and the generation of positive charge during the high-field electron injection into buried oxide of silicon-on-insulator structures fabricated by different technologies are analyzed based on the data obtained from current-voltage, injection current-time, and capacitance-voltage characteristics together with SIMS data. Electron injection both from the Si film and the Si substrate is considered. The possibility of using the trap-assisted electron tunneling mechanisms to explain the high-field charge transfer through the buried oxides of UNIBOND and SIMOX SOI materials is considered. It is shown that considerable positive charge is accumulated near the buried oxide/substrate interface independently from the direction of the injection (from the lm or from the silicon substrate) for UNIBOND and SIMOX SOI structures. Thermal stability of the charge trapped in the buried oxides is studied at temperatures ranging from 20 to 400C. The theory is compared with the experimental data to find out the mechanisms of the generation of positive charge in UNIBOND and SIMOX buried oxides.

Wydawca:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Identyfikator zasobu:

oai:bc.itl.waw.pl:512

DOI:

10.26636/jtit.2004.1.229

ISSN:

1509-4553

eISSN:

1899-8852

Źródło:

Journal of Telecommunications and Information Technology

Język:

ang

Prawa:

Biblioteka Naukowa Instytutu Łączności

Temat i słowa kluczowe:

silicon-on-insulator trap-assisted tunneling anodehole injection buried oxide Fowler-Nordheim current SIMOX band-to-band impact ionization UNIBOND

Kolekcje, do których przypisany jest obiekt:

Data ostatniej modyfikacji:

25 lut 2026

Data dodania obiektu:

10 mar 2010

Liczba wyświetleń treści obiektu:

342

Wszystkie dostępne wersje tego obiektu:

https://bc.itl.waw.pl/publication/572

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Nazwa wydania Data
Nazarov, Alexei N.; Houk, Yuri; Kilchytska, Valeriya, High-field current transport and charge trapping in buried oxide of SOI materials under high-field electron injection, Journal of Telecommunications and Information Technology, 2004, nr 1 25 lut 2026

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

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(+48) 5128 696

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biblioteka@il-pib.pl

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