Filters
  • Collections
  • Group objects
  • File type
  • Creator
  • Subject and Keywords
  • Date
  • Resource Type
  • Language
Advanced search ?

Search for: [Subject and Keywords = CMOS] OR [Subject and Keywords = PECVD] OR [Subject and Keywords = silicon oxynitride] OR [Subject and Keywords = ultra\-thin dielectrics] OR [Title = The influence of annealing \(900◦C\) of ultra\-thin PECVD silicon oxynitride layers, Journal of Telecommunications and Information Technology, 2007, nr 3] OR [Creator = Jakubowski, Andrzej] OR [Creator = Beck, Romuald B.] OR [Creator = Ćwil, Michał] OR [Creator = Głuszko, Grzegorz] OR [Creator = Konarski, Piotr] OR [Creator = Schmeißer, Dieter] OR [Creator = Hoffmann, Patrick] OR [Creator = Mroczyński, Robert]

Number of results: 41

Items per page:
add all to bibliography
Comparison of composition of ultra-thin silicon oxynitride layers’ fabricated by PECVD and ultrashallow rf plasma ion implantation, Journal of Telecommunications and Information Technology, 2007, nr 3

Beck, Romuald B. Ćwil, Michał Konarski, Piotr Bieniek, Tomasz Schmeißer, Dieter Hoffmann, Patrick Mroczyński, Robert

2007, nr 3
artykuł
Composition and electrical properties of ultra-thin SiOxNy layers formed by rf plasma nitrogen implantation/plasma oxidation processes, Journal of Telecommunications and Information Technology, 2007, nr 3

Jakubowski, Andrzej Beck, Romuald B. Ćwil, Michał Konarski, Piotr Bieniek, Tomasz Schmeißer, Dieter Hoffmann, Patrick

2007, nr 3
artykuł
Applying shallow nitrogen implantation from rf plasma for dual gate oxide technology, Journal of Telecommunications and Information Technology, 2007, nr 3

Jakubowski, Andrzej Beck, Romuald B. Ćwil, Michał Głuszko, Grzegorz Konarski, Piotr Bieniek, Tomasz

2007, nr 3
artykuł
Challenges in ultrathin oxide layers formation, Journal of Telecommunications and Information Technology, 2001, nr 1

Jakubowski, Andrzej Beck, Romuald B. Łukasiak, Lidia Korwin-Pawłowski, Michał

2001, nr 1
artykuł
Ultrathin oxynitride films for CMOS technology, Journal of Telecommunications and Information Technology, 2004, nr 1

Jakubowski, Andrzej Beck, Romuald B.

2004, nr 1
artykuł
Novel Method of Improving Electrical Properties of Thin PECVD Oxide Films by Fluorination of Silicon Surface Region by RIE in RF CF4 Plasma, Journal of Telecommunications and Information Technology, 2010, nr 1

Beck, Romuald B. Głuszko, Grzegorz Kalisz, Małgorzata

2010, nr 1
artykuł
The Effect of High Temperature Annealing on Fluorine Distribution Profile and Electro-Physical Properties of Thin Gate Oxide Fluorinated by Silicon Dioxide RIE in CF4 Plasma, Journal of Telecommunications and Information Technology, 2010, nr 1

Beck, Romuald B. Głuszko, Grzegorz Kalisz, Małgorzata

2010, nr 1
artykuł
The role of fluorine-containing ultra-thin layer in controlling boron thermal diffusion into silicon, Journal of Telecommunications and Information Technology, 2007, nr 3

Beck, Romuald B. Ćwil, Michał Kalisz, Małgorzata Barcz, Adam

2007, nr 3
artykuł
Ultra-shallow nitrogen plasma implantation for ultra-thin silicon oxynitride (SiOxNy) layer formation, Journal of Telecommunications and Information Technology, 2005, nr 1

Jakubowski, Andrzej Beck, Romuald B. Bieniek, Tomasz Kudła, Andrzej

2005, nr 1
artykuł
Oxidation kinetic sof silicon strained by silicon germanium, Journal of Telecommunications and Information Technology, 2007, nr 3

Beck, Romuald B. Grabowski, Jarosław

2007, nr 3
artykuł
Adsorption properties of porous silicon, Journal of Telecommunications and Information Technology, 2001, nr 1

Beck, Romuald B. Grabiec, Piotr Gotszalk, Teodor Rangelow, Ivo W. Domański, Krzysztof Dębski, Tomasz

2001, nr 1
artykuł
Silicon-germanium for ULSI, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Halll, Steve Eccleston, Bill

2000, nr 3,4
artykuł
TSSOI as an efficient tool for diagnostics of SOI technology in Institute of Electron Technology, Journal of Telecommunications and Information Technology, 2005, nr 1

Tomaszewski, Daniel Jaroszewicz, Bohdan Grabiec, Piotr Marczewski, Jacek Barański, Mateusz Domański, Krzysztof Kucharski, Krzysztof Kucewicz, Wojciech Grodner, Mirosław Sapor, Maria Kociubiński, Andrzej Niemiec, Halina

2005, nr 1
artykuł
Electrical characterization of ISFETs, Journal of Telecommunications and Information Technology, 2007, nr 3

Tomaszewski, Daniel Jaroszewicz, Bohdan Pijanowska, Dorota G. Grabiec, Piotr Zaborowski, Michał Yang, Chia-Ming

2007, nr 3
artykuł
An accurate prediction of high-frequency circuit behaviour, Journal of Telecommunications and Information Technology, 2005, nr 1

Yoshitomi, Sadayuki Kokatsu, Hideyuki Kojima, Kenji Kimijima, Hideki

2005, nr 1
artykuł
Process and device requirements for mixed-signal integrated circuits in broadband networking, Journal of Telecommunications and Information Technology, 2004, nr 1

Iniewski, Krzysztof Voinigescu, Sorin P. Syrzycki, Marek

2004, nr 1
artykuł
Evolution and recent advances in RF/microwave transistors, Journal of Telecommunications and Information Technology, 2004, nr 1

Schwierz, Frank Liou, Juin J.

2004, nr 1
artykuł
Challenges in scaling of CMOS devices towards 65 nm node, Journal of Telecommunications and Information Technology, 2005, nr 1

Jurczak, Małgorzata Rotschild, Aude Severi, Simone Keersgieter de, An Henson, Kirklen Mertens, Sofie Rooyackers, Rita Pollentier, Ivan Scaekers, Marc Lindsay, Richard Lauwers, Anne Augendre, Emmanuel Veloso, Anabela

2005, nr 1
artykuł
Low frequency noise in advanced Si bulk and SOI MOSFETs, Journal of Telecommunications and Information Technology, 2005, nr 1

Balestra, Francis Ghibaudo, Gérard Jomaah, Jalal

2005, nr 1
artykuł
Gate dielectrics: process integration issues and electrical properties, Journal of Telecommunications and Information Technology, 2005, nr 1

Schwalke, Udo

2005, nr 1
artykuł
A Comparative Study of Single- and Dual-Threshold Voltage SRAM Cells, Journal of Telecommunications and Information Technology, 2011, nr 4

Chaudhry, Amit Kushwaha, Pragya

2011, nr 4
artykuł
Optimization of selectedp arameters of SiGe HBT transistors, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Jakubowski, Andrzej Zaręba, Agnieszka

2000, nr 3,4
artykuł
History of Semiconductors, Journal of Telecommunications and Information Technology, 2010, nr 1

Jakubowski, Andrzej Łukasiak, Lidia

2010, nr 1
artykuł
Characterization of SOI MOSFETs by means of charge-pumping, Journal of Telecommunications and Information Technology, 2007, nr 3

Głuszko, Grzegorz Łukasiak, Lidia Gottlob, Heinrich Lemme, Max Szostak, Sławomir

2007, nr 3
artykuł

Contact details

Address

Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

Phone

(+48) 5128 696

E-Mail

biblioteka@il-pib.pl

Visit us!

This page uses 'cookies'. More information