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Title: Challenges in ultrathin oxide layers formation, Journal of Telecommunications and Information Technology, 2001, nr 1

Creator:

Jakubowski, Andrzej ; Beck, Romuald B. ; Łukasiak, Lidia ; Korwin-Pawłowski, Michał

Date:

2001, nr 1

Resource Type:

artykuł

Description:

In near future silicon technology cannot do without ultrathin oxides, as it becomes clear from the „Roadmap’2000”. Formation, however, of such layers creates a lot of technical and technological problems. The aim of this paper is to present the technological methods that potentially can be used for formation of ultrathin oxide layers for next generations ICs. The methods are briefly described and their pros and cons are discussed.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:683 ; ISSN 1509-4553, on-line: ISSN 1899-8852

DOI:

10.26636/jtit.2001.1.46

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

PECVD oxidation silicon technology ultrathin layers gateoxide RTO

Object collections:

Last modified:

May 20, 2024

In our library since:

Apr 26, 2010

Number of object content hits:

351

All available object's versions:

https://bc.itl.waw.pl/publication/759

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Edition name Date
Beck, Romuald B.; Jakubowski, Andrzej; Łukasiak, Lidia; Korwin-Pawłowski, Michał, Challenges in ultrathin oxide layers formation, Journal of Telecommunications and Information Technology, 2001, nr 1 May 20, 2024

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

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