Advanced search ?

Object

Download

Title: Technology of MISFET with SiO2/BaTiO3 System as a Gate Insulator, Journal of Telecommunications and Information Technology, 2009, nr 4

Creator:

Szmidt, Jan ; Firek, Piotr

Date:

2009, nr 4

Resource Type:

artykuł

Description:

The properties of barium titanate (BaTiO3, BT), such as high dielectric constant and resistivity, allow it to find numerous applications in the field of microelectronics. In this work silicon metal-insulator-semiconductor field effect transistor (MISFET) structures with BaTiO3 thin films (containing La2O3 admixture) acting as gate insulator were investigated. The films were produced by means of radio frequency plasma sputtering (RF PS) of sintered BaTiO3 + La2O3 (2% wt.) target. In the paper transfer and output I−V, transconductance and output conductance characteristics of the obtained transistors are presented and discussed. Basic parameters of these devices, such as threshold voltage (VTH) are determined and discussed.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:474 ; ISSN 1509-4553, on-line: ISSN 1899-8852

DOI:

10.26636/jtit.2009.4.972

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

radio frequency plasma sputtering MISFET structures I–V characteristics barium titanate

Object collections:

Last modified:

Aug 27, 2024

In our library since:

Mar 8, 2010

Number of object content hits:

269

All available object's versions:

https://bc.itl.waw.pl/publication/532

Show description in RDF format:

RDF

Show description in OAI-PMH format:

OAI-PMH

Edition name Date
Firek, Piotr; Szmidt, Jan, echnology of MISFET with SiO2/BaTiO3 System as a Gate Insulator, Journal of Telecommunications and Information Technology, 2009, nr 4 Aug 27, 2024

Objects Similar
Electrical characterization of ISFETs, Journal of Telecommunications and Information Technology, 2007, nr 3

Tomaszewski, Daniel Jaroszewicz, Bohdan Pijanowska, Dorota G. Grabiec, Piotr Zaborowski, Michał Yang, Chia-Ming

2007, nr 3
artykuł
Properties of Al contacts to Si surface exposed in the course of plasma etching of previously grown nanocrystalline c-BN lm, Journal of Telecommunications and Information Technology, 2005, nr 1

Szmidt, Jan Werbowy, Aleksander Firek, Piotr Olszyna, Andrzej R.

2005, nr 1
artykuł
Influence of the deposition process parameters on electronic properties of BN films obtained by means of RF PACVD, Journal of Telecommunications and Information Technology, 2007, nr 3

Szmidt, Jan Werbowy, Aleksander Kwietniewski, Norbert Firek, Piotr

2007, nr 3
artykuł
Correlation between electric parameters of carbon layers and their capacity for field emission, Journal of Telecommunications and Information Technology, 2007, nr 3

Szmidt, Jan Czerwosz, Elżbieta Gronau, Ryszard

2007, nr 3
artykuł
Reliability of MIS transistors with plasma deposited Al2O3 gate dielectric film, Journal of Telecommunications and Information Technology, 2001, nr 1

Szmidt, Jan Werbowy, Aleksander Dusiński, Emil Zdunek, Krzysztof

2001, nr 1
artykuł
More
×

Citation

Citation style:

Contact details

Address

Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

Phone

(+48) 5128 696

E-Mail

biblioteka@il-pib.pl

Visit us!

This page uses 'cookies'. More information