Advanced search ?

Object

Download

Title: Influence of the deposition process parameters on electronic properties of BN films obtained by means of RF PACVD, Journal of Telecommunications and Information Technology, 2007, nr 3

Creator:

Szmidt, Jan ; Werbowy, Aleksander ; Kwietniewski, Norbert ; Firek, Piotr

Date:

2007, nr 3

Resource Type:

artykuł

Description:

This work presents results of investigations of electronic properties of undoped boron nitride (BN) films produced on Si substrates in the course of radio frequency (rf) PACVD process with boron triethyl (C2H5)3B as the boron source. The influence of the deposition process parameters on thickness and electronic properties (resistivity r, dielectric strength EBR) of BN films based on ellipsometry and I-V curve measurements at room temperature is studied. The obtained results show that proper selection of deposition process parameters allows BN layers with the required thickness and advantageous values of r and EBR to be fabricated. BN becomes therefore an interesting material for microelectronics applications.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:282

DOI:

10.26636/jtit.2007.3.825

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

thin BN films III-nitrides electronic properties RF PACVD

Object collections:

Last modified:

Jul 24, 2024

In our library since:

Jan 27, 2010

Number of object content hits:

296

All available object's versions:

https://bc.itl.waw.pl/publication/325

Show description in RDF format:

RDF

Show description in OAI-PMH format:

OAI-PMH

Edition name Date
Firek, Piotr; Werbowy, Aleksander; Szmidt, Jan; Kwietniewski, Norbert, Influence of the deposition process parameters on electronic properties of BN films obtained by means of RF PACVD, Journal of Telecommunications and Information Technology, 2007, nr 3 Jul 24, 2024

Objects Similar
Properties of Al contacts to Si surface exposed in the course of plasma etching of previously grown nanocrystalline c-BN lm, Journal of Telecommunications and Information Technology, 2005, nr 1

Szmidt, Jan Werbowy, Aleksander Firek, Piotr Olszyna, Andrzej R.

2005, nr 1
artykuł
Technology of MISFET with SiO2/BaTiO3 System as a Gate Insulator, Journal of Telecommunications and Information Technology, 2009, nr 4

Szmidt, Jan Firek, Piotr

2009, nr 4
artykuł
Reliability of MIS transistors with plasma deposited Al2O3 gate dielectric film, Journal of Telecommunications and Information Technology, 2001, nr 1

Szmidt, Jan Werbowy, Aleksander Dusiński, Emil Zdunek, Krzysztof

2001, nr 1
artykuł
Multistage optical switching networks, Journal of Telecommunications and Information Technology, 2002, nr 2

Kaczmarek, Sylwester

2002, nr 2
artykuł
Correlation between electric parameters of carbon layers and their capacity for field emission, Journal of Telecommunications and Information Technology, 2007, nr 3

Szmidt, Jan Czerwosz, Elżbieta Gronau, Ryszard

2007, nr 3
artykuł
More
×

Citation

Citation style:

Contact details

Address

Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

Phone

(+48) 5128 696

E-Mail

biblioteka@il-pib.pl

Visit us!

This page uses 'cookies'. More information