Advanced search ?

Object

Download

Title: LPT and SLPT Measurement Methods of Flat-Band Voltage (VFB) in MOS Devices, Journal of Telecommunications and Information Technology, 2009, nr 4

Creator:

Przewłocki, Henryk M. ; Piskorski, Krzysztof

Date:

2009, nr 4

Resource Type:

artykuł

Description:

The photoelectric techniques are often used for the measurements of metal oxide semiconductor (MOS) structure parameters. These methods, which consist in illuminating the MOS structure with a semitransparent metal gate by a UV light beam, are often competitive for typical electric measurements. The results obtained by different photoelectric methods are, in many cases, more accurate and reproducible than the results of other measurements. The flat-band voltage VFB is an important parameter of any MOS structure since its value influences the threshold voltage VT , which decides for example about power consumption of MOS transistors. One of the methods to measure the VFB value is the electric method of C(V) characteristic. This method involves certain calculations and requires the knowledge about parameters of the investigated sample. The accuracy of this method is rarely better than ±100 mV (for higher doping of the substrates the accuracy is worse). The other method of VFB value determination, outlined in this article, is the photoelectric light pulse technique (LPT) method. This method based on the idea proposed by Yun is currently being optimized and verified experimentally.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:477 ; ISSN 1509-4553, on-line: ISSN 1899-8852

DOI:

10.26636/jtit.2009.4.982

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

MOS system light pulse technique scanned light pulse technique flat-band voltage photoelectric methods

Object collections:

Last modified:

Aug 27, 2024

In our library since:

Mar 8, 2010

Number of object content hits:

163

All available object's versions:

https://bc.itl.waw.pl/publication/535

Show description in RDF format:

RDF

Show description in OAI-PMH format:

OAI-PMH

Edition name Date
Piskorski, Krzysztof; Przewłocki, Henryk M., LPT and SLPT Measurement Methods of Flat-Band Voltage (VFB) in MOS Devices, Journal of Telecommunications and Information Technology, 2009, nr 4 Aug 27, 2024

Objects Similar
Investigation of barrier height distributions over the gate area of Al-SiO2-Si structures, Journal of Telecommunications and Information Technology, 2007, nr 3

Przewłocki, Henryk M. Piskorski, Krzysztof

2007, nr 3
artykuł
Comparison of the barrier height measurements by the Powell method with the ΦMS measurement results, Journal of Telecommunications and Information Technology, 2005, nr 1

Przewłocki, Henryk M. Rzodkiewicz, Witold Piskorski, Krzysztof Kudła, Andrzej

2005, nr 1
artykuł
Effects of stress annealing on the electrical and the optical properties of MOS devices, Journal of Telecommunications and Information Technology, 2005, nr 1

Przewłocki, Henryk M. Rzodkiewicz, Witold Kudła, Andrzej Sawicki, Zbigniew

2005, nr 1
artykuł
Energy concepts involved in MOS characterization, Journal of Telecommunications and Information Technology, 2007, nr 2

Engström, Olof Gutt, Tomasz Przewłocki, Henryk M.

2007, nr 2
artykuł
Variability of the local ΦMS values over the gate area of MOS devices, Journal of Telecommunications and Information Technology, 2005, nr 1

Przewłocki, Henryk M. Massoud, Hisham Z. Kudła, Andrzej Brzezińska, Danuta

2005, nr 1
artykuł
More
×

Citation

Citation style:

Contact details

Address

Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

Phone

(+48) 5128 696

E-Mail

biblioteka@il-pib.pl

Visit us!

This page uses 'cookies'. More information