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Title: On-wafer wideband characterization: a powerful tool for improving the IC technologies, Journal of Telecommunications and Information Technology, 2007, nr 2

Autor:

Raskin, Jean-Pierre ; Lederer, Dimitri

Data wydania:

2007, nr 2

Typ zasobu:

artykuł

Opis:

In the present paper, the interest of wideband characterization for the development of integrated technologies is highlighted through several advanced devices, such as 120 nm partially depleted (PD) silicon-on-insulator (SOI) MOSFETs, 120 nm dynamic threshold (DT) voltage – SOI MOSFETs, 50 nm FinFETs as well as long-channel planar double gate (DG) MOSFETs.

Wydawca:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Identyfikator zasobu:

oai:bc.itl.waw.pl:269

DOI:

10.26636/jtit.2007.2.811

ISSN:

1509-4553

eISSN:

1899-8852

Źródło:

Journal of Telecommunications and Information Technology

Język:

ang

Prawa:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

MOSFET small-signal equivalent circuit extraction techniques wideband characterization silicon-on-insulator microwave frequency

Object collections:

Last modified:

Jul 24, 2024

In our library since:

Jan 22, 2010

Number of object content hits:

379

All available object's versions:

https://bc.itl.waw.pl/publication/311

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Edition name Date
Lederer, Dimitri; Raskin, Jean-Pierre, On-wafer wideband characterization: a powerful tool for improving the IC technologies, Journal of Telecommunications and Information Technology, 2007, nr 2 Jul 24, 2024

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

Phone

(+48) 5128 696

E-Mail

biblioteka@il-pib.pl

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